The goal of this PhD project is to work towards a new paradigm of resist-free patterning of 2D materials such as MoS2 and WS2. 2D transition metal dichalcogenides (TMDs) will play a central role in scaling nanoelectronics beyond silicon limits. In order to integrate 2D TMDs in ultra-scaled CMOS devices, developing a patterning technology via state-of-the-art extreme ultraviolet (EUV) lithography is essential, however this comes with a new set of challenges related to the ultra-thin body of these layers.

Qualifications 

For this PhD position, we are looking for a highly talented, enthusiastic, and exceptionally motivated candidate with MSc degree (or equivalent) in (Applied) Physics, Chemistry, Chemical Engineering, Material Science, Electrical Engineering, or similar.